MJ1509 High Power RF LDMOS FET

Innogration

Description

MJ1509 LDMOS TRANSISTOR 90W, 28V High Power RF LDMOS FETs .
The MJ1509 is a 90-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1.

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Datasheet Specifications

Part number: MJ1509
Manufacturer: Innogration
File Size: 272.58 KB
Datasheet: MJ1509-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protectio

Applications

* at frequencies HF to 1.5 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MJ1509 Preliminary Datasheet V1.0 MJ1509
* Typical Performance (on Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 500 mA, CW. Frequency Gp (dB) P-1dB

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MJ1509 High Power LDMOS FET Innogration

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