MQ081K0VP

High Power RF LDMOS FET

Innogration

MQ081K0VP Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Excellent thermal stability, low HCI drift

* Compliant to Restriction of Haza

MQ081K0VP General Description

The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz.
* Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C P.

MQ081K0VP Datasheet (659.17 KB)

MQ081K0VP Datasheet Preview — Preview of MQ081K0VP PDF

Datasheet Details

Part number:

MQ081K0VP

Manufacturer:

Innogration

File Size:

659.17 KB

Description:

High power rf ldmos fet.

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MQ081K0VP High Power LDMOS FET Innogration

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MQ081K0VP Features

MQ081K0VP General Description

Datasheet Details

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