MQ081K0VP High Power RF LDMOS FET

Innogration

Description

MQ081K0VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs .
The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 4.

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Datasheet Specifications

Part number: MQ081K0VP
Manufacturer: Innogration
File Size: 659.17 KB
Datasheet: MQ081K0VP-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Excellent thermal stability, low HCI drift
* Compliant to Restriction of Haza

Applications

* with frequencies 400MHz to 800MHz.
* Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% 19.3 1060 68.5 Document Number: MQ081K0VP Preli

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