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INN150FQ032A Datasheet - Innoscience

INN150FQ032A - 150V Enhancement-mode GaN Power Transistor

INN150FQ032A Features

*  GaN-on-Silicon E-mode HEMT technology  Industry Application  Very low gate charge  Ultra-low on resistance  Very small footprint 12 11 10 9 8 7 6 31 20 21 22 23 24 25 3. Applications  High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synch

INN150FQ032A-Innoscience.pdf

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Datasheet Details

Part number:

INN150FQ032A

Manufacturer:

Innoscience

File Size:

1.12 MB

Description:

150v enhancement-mode gan power transistor.

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