INN150FQ032A Datasheet - Innoscience

INN150FQ032A, 150V Enhancement-mode GaN Power Transistor

INN150FQ032A 150V Enhancement-mode GaN Power Transistor INN150FQ032A 1.General .
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.

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Datasheet Details

Part number:

INN150FQ032A

Manufacturer:

Innoscience

File Size:

1.12 MB

Description:

150V Enhancement-mode GaN Power Transistor

Applications

*  High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synchronous Rectification  Telecom Power Supply  Motor driver 4. Key performance parameters D G S Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max 150 RDS(on),max @

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