INN150FQ032A
description
Ga N-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.
2. Features
Ga N-on-Silicon E-mode HEMT technology Industry Application Very low gate charge Ultra-low on resistance Very small footprint
12 11 10 9 8 7
21 22 23 24 25
3. Applications
High frequency DC-DC converter Solar Systems optimizers and microinverters PD Charger and PSU Synchronous Rectification Tele Power Supply Motor driver
4. Key performance parameters
Table 1
Key performance parameters at Tj = 25 °C
Parameter
Value
VDS,max
RDS(on),max @ VGS = 5 V
QG,typ @ VDS = 75V
IDS,Pulse
QOSS @ VDS = 75V
Unit V mΩ n C A n C
5. Pin information
Table 2
Pin information
Pin
Pin description
1,2,25
Gate
3-7,9,11,21,23
Source
8,10,12-20,22,24...
