INN150FQ032A Datasheet, Transistor, Innoscience

INN150FQ032A Features

• Transistor  GaN-on-Silicon E-mode HEMT technology  Industry Application  Very low gate charge  Ultra-low on resistance  Very small footprint 12 11 10 9 8 7 6 31 20 21 22 23 24 25 3. Appl

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Part number:

INN150FQ032A

Manufacturer:

Innoscience

File Size:

1.12MB

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📄 Datasheet

Description:

150v enhancement-mode gan power transistor. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size. 13 19 2. Fe

INN150FQ032A Application

• Applications  High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synchronous Rectification  Teleco

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INN150FQ032A

Innoscience

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