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INN150FQ032A - 150V Enhancement-mode GaN Power Transistor

INN150FQ032A Description

INN150FQ032A 150V Enhancement-mode GaN Power Transistor INN150FQ032A 1.General .
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.

INN150FQ032A Applications

*  High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synchronous Rectification  Telecom Power Supply  Motor driver 4. Key performance parameters D G S Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max 150 RDS(on),max @

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Datasheet Details

Part number
INN150FQ032A
Manufacturer
Innoscience
File Size
1.12 MB
Datasheet
INN150FQ032A-Innoscience.pdf
Description
150V Enhancement-mode GaN Power Transistor

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150V Enhancement-mode GaN Power Transistor Innoscience
Innoscience INN150FQ032A-like datasheet