INN650DA260A
description
650V Ga N-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size
2. Features
Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard Ro HS, Pb-free, REACH-pliant
DD D D
DD D D
3. Applications
AC-DC converters DC-DC converters Totem pole PFC Fast battery charging High density power conversion High efficiency power conversion
S S SK G
4. Key performance parameters
Table 1
Key performance parameters at Tj = 25 °C
Parameter
Value
VDS,max
RDS(on),max @ VGS = 6 V
QG,typ @ VDS = 400 V
ID,pulse
QOSS @ VDS = 400 V
Qrr @ VDS = 400 V
Unit V mΩ n C A n C n C
5. Pin information
Table 2
Pin information
Gate
Drain
1,2,3,4
Kelvin Source 7
Source 5,6
Table 3
Ordering...
