INN700D190B
description
700V Ga N-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size
2. Features
Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard Ro HS, Pb-free, REACH-pliant
3. Applications
DCM/BCM PFC AHB/LLC/QR Flyback/ACF DCDC converter LED driver Fast battery charger Notebook/AIO adaptor Desktop PC/ATX/TV/power tool power supply
4. Key performance parameters
Table 1
Key performance parameters at Tj = 25 °C
Parameter
Value
VDS,max
RDS(on),max @ VGS = 6 V
QG,typ @ VDS = 400 V
ID,pulse
QOSS @ VDS = 400 V
Qrr @ VDS = 400 V
Unit V mΩ n C A n C n C
G SK
5. Pin information
Table 2
Pin information
Gate
Drain
1,2,3,4
Kelvin Source 7
Source 5,6,9
Table...
