IS42S83200B Datasheet - Integrated Silicon Solution

IS42S83200B 256-MBIT SYNCHRONOUS DRAM

A0-A12 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM VDD Vss VDDQ VssQ NC Write Enable Data Input/Output Mask Power Ground P.

IS42S83200B Features

* Clock frequency: 166, 143 MHz

* Fully synchronous; all signals referenced to a positive clock edge www.DataSheet4U.com

* Internal bank OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer

IS42S83200B_IntegratedSiliconSolution.pdf