A28F010 Datasheet - Intel Corporation

A28F010 1024K (128K x 8) CMOS FLASH MEMORY

Symbol A0 *A16 DQ0 *DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high an.

A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles Minimum over Automotive Temperature Range 12 0V g 5% VPP High-Performance Read 120 ns Maximum Access Time CMOS Low Power Consumption 30 mA Maximum Active Current 300 mA Maximum Standby Current Y Y Integrated Program Era.

A28F010 Features

* g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic DIP 32-Lead PLCC (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y

A28F010_IntelCorporation.pdf