28F001BX-T Datasheet - Intel

28F001BX-T 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

Symbol A0 *A16 DQ0 *DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUTS OUTPUTS Inputs data and commands during memory write cycles outputs data during memory Status Register and Identifie.

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) SRAM-Compatible Write Interface Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical 12 0V g 5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maxim.

28F001BX-T Features

* that simplify write and allow block erase These devices aid the system designer by combining the functions of several components into one making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM Many new and existing designs can take advantage of the 28F001B

28F001BX-T Datasheet (436.25 KB)