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2N5197 - N-Channel Dual Silicon Junction Field-Effect Transistor

This page provides the datasheet information for the 2N5197, a member of the 2N5196 N-Channel Dual Silicon Junction Field-Effect Transistor family.

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Datasheet Details

Part number 2N5197
Manufacturer InterFET
File Size 408.83 KB
Description N-Channel Dual Silicon Junction Field-Effect Transistor
Datasheet download datasheet 2N5197 Datasheet
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Other Datasheets by InterFET
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  • 2N5199 - N-Channel Dual Silicon Junction Field-Effect Transistor
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Full PDF Text Transcription

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8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage ~eN Differencial Gate-Source Voltage Differencial Gate Source Voltage with Temperature (VGS1-VGS2) Δ│VGS1-VGS2│ ΔT Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Dev
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