N3600L - Process Geometry

InterFET

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Datasheet Details

Part number	N3600L
Manufacturer	InterFET
File Size	854.11 KB
Description	Process Geometry
Datasheet	N3600L-InterFET.pdf

N3600L Product details

Description

The InterFET N3600L Geometry is ideal for low noise high gain applications. IF3601 IF3602 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -15 -22 V 50 1000 mA -0.5 -3 V 750 mS Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parame

Features

Low Noise: 0.5 nV/√Hz Typical.
Typical Breakdown Voltage: -22V.
Low On Resistance: 2.0Ω Typical.
Die Size: 1838um X 1838um X 203um.
Oversized Bond Pads.
Substrate Connected to Gate.
Au Back-Side Finish.

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Published: Jun 13, 2020 |