N3600L Datasheet - InterFET

N3600L, Process Geometry

InterFET Product Folder Technical Support Order Now N3600L N3600L Process Geometry

Features

* Low Noise: 0.5 nV/√Hz Typical
* Typical Breakdown Voltage: -22V
* Low On Resistance: 2.0Ω Typical
* Die Size: 1838um X 1838um X 203um
* Oversized Bond Pads
* Substrate Connected to Gate

Applications

* Large Capacitance Detector Pre-Amplifier
* Matched Pair Applications

N3600L-InterFET.pdf

N3600L Datasheet Preview — Preview of N3600L PDF

Datasheet Details

Part number:

N3600L

Manufacturer:

InterFET

File Size:

854.11 KB

Description:

Process geometry.

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