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N3600L

Process Geometry

N3600L Features

* Low Noise: 0.5 nV/√Hz Typical

* Typical Breakdown Voltage: -22V

* Low On Resistance: 2.0Ω Typical

* Die Size: 1838um X 1838um X 203um

* Oversized Bond Pads

* Substrate Connected to Gate

* Au Back-Side Finish Applications

* Large Capac

N3600L General Description

The InterFET N3600L Geometry is ideal for low noise high gain applications. Geometry Top View S-D S-D S-D G 3600 G D-S D-S D-S Standard Parts

* IF3601

* IF3602 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(of.

N3600L Datasheet (854.11 KB)

Preview of N3600L PDF

Datasheet Details

Part number:

N3600L

Manufacturer:

InterFET

File Size:

854.11 KB

Description:

Process geometry.

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N3600L Process Geometry InterFET

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