Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information
TO-220AB
EM XP AL ME P :L ETH : IS TH IS A IS N F IR EXA N AIR 1 0F1 1 00 1 0 W ITA H AE SM SB EL MY BLY W ITH SS LO TO D CE OD 9B1M LOT C 9E B 1M
A A
INR TE RT NIO A TIO N.
9520N_InternationalRectifier.pdf
