AUIRF3415 Datasheet - International Rectifier

AUIRF3415, Power MOSFET

AUTOMOTIVE GRADE PD - 97625 .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

Features

* l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
* G AUIRF3415 HEXFET® Power MOSFET D V(BR)DSS 150V RDS

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

AUIRF3415-InternationalRectifier.pdf