Description
AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.
Features
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Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* AUIRF4905S/L
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HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID (Silicon Limited) -5
Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme