Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel
AUIRF4905L Features
* l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -5
AUIRF4905S-InternationalRectifier.pdf
Datasheet Details
AUIRF4905L, AUIRF4905S
International Rectifier
279.38 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: AUIRF4905L, AUIRF4905S.
Please refer to the document for exact specifications by model.
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