AUIRF4905S Datasheet - International Rectifier

AUIRF4905S Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF4905S Features

* l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

* AUIRF4905S/L D HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) -5

AUIRF4905S-InternationalRectifier.pdf