AUIRF5210S Datasheet (International Rectifier)

AUIRF5210S, Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

AUIRF5210S Features

* l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified