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AUIRF5210S Power MOSFET

AUIRF5210S Description

AUTOMOTIVE GRADE AUIRF5210S HEXFET® Power MOSFET -100V 60m -38A .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRF5210S Features

* l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

AUIRF5210S Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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