Datasheet Specifications
- Part number
- AUIRF5210S
- Manufacturer
- International Rectifier
- File Size
- 238.22 KB
- Datasheet
- AUIRF5210S-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
AUTOMOTIVE GRADE AUIRF5210S HEXFET® Power MOSFET -100V 60m -38A .
Features
* l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive QualifiedApplications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremeAUIRF5210S Distributors
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