AUIRF5210S

Power MOSFET

International Rectifier

AUIRF5210S Features

* l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

AUIRF5210S General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF5210S Datasheet (238.22 KB)

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Datasheet Details

Part number:

AUIRF5210S

Manufacturer:

International Rectifier

File Size:

238.22 KB

Description:

Power mosfet.

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AUIRF5210S Power MOSFET International Rectifier

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AUIRF5210S Features

AUIRF5210S General Description

Datasheet Details

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