AUIRF6218L, AUIRF6218S Datasheet - International Rectifier

AUIRF6218L, AUIRF6218S, Power MOSFET

AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

Features

* l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

AUIRF6218S-InternationalRectifier.pdf