Datasheet Specifications
- Part number
- AUIRF6218S
- Manufacturer
- International Rectifier
- File Size
- 246.30 KB
- Datasheet
- AUIRF6218S-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
AUTOMOTIVE GRADE .
Features
* l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to TjmaxApplications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremeAUIRF6218S Distributors
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