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AUIRF6218S Power MOSFET

AUIRF6218S Description

AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRF6218S Features

* l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax

AUIRF6218S Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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