AUIRFL024N Power MOSFET

International Rectifier

Description

AUTOMOTIVE GRADE AUIRFL024N .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Datasheet Specifications

Part number: AUIRFL024N
Manufacturer: International Rectifier
File Size: 221.54 KB
Datasheet: AUIRFL024N-InternationalRectifier.pdf
Description: Power MOSFET

Features

* Advanced Planar Technology
* Low On-Resistance
* Dynamic dV/dT Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Q

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

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AUIRFL024N Power MOSFET International Rectifier

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