AUIRFP064N Datasheet - International Rectifier

AUIRFP064N Power MOSFET

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well.

AUIRFP064N Features

* HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

* V(BR)DSS RDS(on) max. 55V 0.008Ω 110Ag G S ID

AUIRFP064N_InternationalRectifier.pdf