AUIRFR024N
International Rectifier
405.94kb
Power mosfet. Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techn
TAGS
📁 Related Datasheet
AUIRFR024N - Power MOSFET
(Infineon)
AUTOMOTIVE GRADE
Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ful.
AUIRFR1010Z - Power MOSFET
(International Rectifier)
AUTOMOTIVE GRADE
PD - 97683
AUIRFR1010Z
Features
● ● ● ● ● ● ●
HEXFET® Power MOSFET
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited.
AUIRFR1018E - Power MOSFET
(International Rectifier)
AUTOMOTIVE GRADE
Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanc.
AUIRFR120Z - Power MOSFET
(Infineon)
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avala.
AUIRFR120Z - Power MOSFET
(International Rectifier)
PD - 96345
AUTOMOTIVE MOSFET
Features
l l l l l l l
AUIRFR120Z AUIRFU120Z
HEXFET® Power MOSFET V(BR)DSS 100V
RDS(on) typ. 150mΩ 190mΩ
8.7A
D
Advanc.
AUIRFR2307Z - HEXFET Power MOSFET
(International Rectifier)
..
AUTOMOTIVE GRADE
PD - 97546
Features
● ● ● ● ● ● ●
AUIRFR2307Z
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low O.
AUIRFR2405 - Power MOSFET
(International Rectifier)
AUTOMOTIVE GRADE
PD - 97688A
AUIRFR2405
Features
l
●
HEXFET® Power MOSFET
D
l l l l l l l
Advanced Planar Technology Dynamic dV/dT Rating Low On-.
AUIRFR2407 - Power MOSFET
(International Rectifier)
AUTOMOTIVE GRADE
PD - 97689A
AUIRFR2407
Features
l l
●
HEXFET® Power MOSFET
D
l l l l l l
Advanced Planar Technology Low On-Resistance Dynamic dV.
AUIRFR2607Z - Power MOSFET
(Infineon)
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avala.
AUIRFR2607Z - Power MOSFET
(International Rectifier)
PD - 96323
AUTOMOTIVE MOSFET
AUIRFR2607Z
HEXFET® Power MOSFET
D
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C O.