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AUIRLU024N, AUIRLR024N Power MOSFET

AUIRLU024N Description

PD- 96348 AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRLU024N Features

* l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Q

AUIRLU024N Applications

* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

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This datasheet PDF includes multiple part numbers: AUIRLU024N, AUIRLR024N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AUIRLU024N, AUIRLR024N
Manufacturer
International Rectifier
File Size
338.93 KB
Datasheet
AUIRLR024N_InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: AUIRLU024N, AUIRLR024N.
Please refer to the document for exact specifications by model.

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Power MOSFET International Rectifier
International Rectifier AUIRLU024N-like datasheet