AUIRLU024N

Power MOSFET

International Rectifier

AUIRLU024N Features

* l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Q

AUIRLU024N General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well.

AUIRLU024N Datasheet (338.93 KB)

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AUIRLU024N

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International Rectifier

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338.93 KB

Description:

Power mosfet.

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AUIRLU024N Power MOSFET International Rectifier

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AUIRLU024N Features

AUIRLU024N General Description

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