F7811W Datasheet | International Rectifier

PD-94031A IRF7811W HEXFET® Power MOSFET for DC-DC Converters - - - - .. N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses 8 7 A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. SO-8 T o p V ie w DEVICE CHARACTERISTICS… IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18n C 5.5n C 12n...