FAG50 Datasheet - International Rectifier

FAG50 IRFAG50

PD - 90582 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRFAG50   IRFAG50 1000V, N-CHANNEL BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode .

FAG50 Features

* n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Parameter Continuous Dr

FAG50 Datasheet (178.99 KB)