Datasheet Specifications
- Part number
- FB180SA10
- Manufacturer
- International Rectifier
- File Size
- 137.03 KB
- Datasheet
- FB180SA10_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Ratin.
Features
* IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www. irf. com/ Data and specifications subject to change without notice. 2/99Applications
* at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry. S O T -22 7 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EFB180SA10 Distributors
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