FB180SA10 Datasheet - International Rectifier

FB180SA10, Power MOSFET

PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Ratin

Features

* IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl.
Suite D.
207, Sec.
2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.
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com/ Data and specifications subject to change without notice.
2/99

Applications

* at power dissipation levels to approximately 500 watts.
The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry.
S O T -22 7 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR E

FB180SA10_InternationalRectifier.pdf