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FB9N60A IRFB9N60A

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Description

PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive R.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Features

* 1 5.24 (.60 0) 1 4.84 (.58 4) 1 .1 5 (.0 4 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4 .0 6 (.160 ) 3 .5 5 (.140 ) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M 3X 0.55 (.02 2) 0.4

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. www. DataSheet4U. com TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS I

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FB9N60A IRFB9N60A International Rectifier
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