G7S313U Features
* Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max 160 A 150 °C l
G7S313UPBF_InternationalRectifier.pdf
Datasheet Details
G7S313U, G7S313UPBF
International Rectifier
266.48 KB
Igbt.
This datasheet PDF includes multiple part numbers: G7S313U, G7S313UPBF.
Please refer to the document for exact specifications by model.
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