IB6N60A Datasheet - International Rectifier

IB6N60A IRFIB6N60A

www.DataSheet4U.com PD - 91813 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l IRFIB6N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK G DS Absolute Maximum Ratings.

IB6N60A Features

* gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25°C, L = 6.8mH RG = 25W, IAS = 9.2A. (See Figure 12)

* ISD £ 9.2A, di/dt £ 50A/µs, VDD £ V(BR)DSS, TJ £ 150°C t=60s, f=60Hz WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (

IB6N60A Datasheet (183.47 KB)