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IG1NT052N10R - Radiation Hardened GaN transistor

International Rectifier

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Datasheet Details

Part number	IG1NT052N10R
Manufacturer	International Rectifier
File Size	670.36 KB
Description	Radiation Hardened GaN transistor
Datasheet	IG1NT052N10R-InternationalRectifier.pdf

IG1NT052N10R Product details

Description

IG1NT052N10R is part of the IR HiRel family of products.

Features

Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV. cm2/mg (Au ion).
Ultra low RDS(on).
Low total gate charge.
Zero reverse recovery charge.
Hermetically sealed ceramic package.
Surface mount.
Light weight.
ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
VDS max: 100V.
ID: 52A.
RDS(on) max : 6.0m.
QG max: 13nC.
Size: 7.1mm x 5.3mm.
REF: MIL.

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Published: Oct 26, 2025 |