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IR062HD4C10U-P2

HIGH VOLTAGE HALF BRIDGE

IR062HD4C10U-P2 Features

* Output Power IGBT’s in half-bridge configuration

* 575V rated breakdown voltage

* High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V

* Matched propagation delay for both channels

* Inde

IR062HD4C10U-P2 General Description

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V.

IR062HD4C10U-P2 Datasheet (87.54 KB)

Preview of IR062HD4C10U-P2 PDF

Datasheet Details

Part number:

IR062HD4C10U-P2

Manufacturer:

International Rectifier

File Size:

87.54 KB

Description:

High voltage half bridge.

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IR062HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE International Rectifier

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