Description
Programmable 0.54~5 µs The IR2108(4)(S) are high voltage, high speed Internal 540ns IN/SD yes power MOSFET and IGBT drivers with depenProgrammable 0.54~5 µs dent high and low side referenced output yes Internal 100ns HIN/LIN COM 2304 channels.
Features
- Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC.
- Gate drive supply range from 10 to 20V IR21084S IR2108S.
- Undervoltage lockout for both channels.
- 3.3V, 5V and 15V input logic compatible 14-Lead PDIP.
- Cross-conduction prevention logic IR21084 Matched propagation delay for both channels.
- High side output in phase with HIN input 8-Lead PDIP.
- Low side output out of phase w.
IR21084_InternationalRectifier.pdf
