IRF540N Datasheet - International Rectifier

IRF540N, Power MOSFET

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching G Fully Avalanche Rated Lea.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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IRF540N_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF540N

Manufacturer:

International Rectifier

File Size:

153.42 KB

Description:

Power MOSFET

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC

IRF540N Distributors

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IRF540N Power MOSFET International Rectifier

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