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IRF7204PBF - Power MOSFET

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HEXFET® Power MOSFET S1 S2 8 A D 7D VDSS = -20V S3 G4 6 D RDS(on) = 0.060Ω 5D Top View ID = -5.3A Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The S

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