IRFB4115GPbF Datasheet | International Rectifier

- 96216 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free l Halogen-Free IRFB4115GPb F HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID (Silicon Limited) 150V 9.3mΩ 11mΩ 104A DS G TO-220AB IRFB4115GPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR d Single Pulse Avalanche Energy ÙAvalanche Current ™Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθCS RθJA Parameter i Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient .irf. G Gate D Drain S...