IRFB4115GPbF Datasheet - International Rectifier

IRFB4115GPbF Power MOSFET

PD - 96216 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free IRFB4115GPbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID (Silicon Limited) 150V 9.3mΩ 11mΩ 104A D DS G TO-220A.

IRFB4115GPbF Features

* se. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche

IRFB4115GPbF Datasheet (309.56 KB)