Datasheet Details
Part number:
IRFB4115GPbF
Manufacturer:
International Rectifier
File Size:
309.56 KB
Description:
Power MOSFET
Features
* se. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalancheApplications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dIRFB4115GPbF-InternationalRectifier.pdf
Datasheet Details
Part number:
IRFB4115GPbF
Manufacturer:
International Rectifier
File Size:
309.56 KB
Description:
Power MOSFET
IRFB4115GPbF Distributors
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