IRFF110 Datasheet - International Rectifier

IRFF110 HEXFET TRANSISTORS

PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF110 100V RDS(on) .60Ω ID 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductan.

IRFF110 Features

* n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain

IRFF110-InternationalRectifier.pdf