IRFP3206PBF Datasheet - International Rectifier

IRFP3206PBF HEXFET Power MOSFET

PD - 97127 IRFP3206PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G www.DataSheet4U.com D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.4m: 3.0m: 200A c 120A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capabili.

IRFP3206PBF Features

* t type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

IRFP3206PBF Datasheet (328.70 KB)