IRFP4110PBF Datasheet - International Rectifier

IRFP4110PBF HEXFET Power MOSFET

PD - 97311 IRFP4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 3.7m: 4.5m: 180A c 120A D G S D G S TO-2.

IRFP4110PBF Features

* is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. Tjmax (

IRFP4110PBF Datasheet (387.27 KB)