IRFR825TRPbF
Features and Benefits
- Fast body diode eliminates the need for external diodes in ZVS applications.
- Lower Gate charge results in simpler drive requirements.
- Higher Gate voltage threshold offers improved noise immunity.
D-Pak IRFR825TRPb F
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max. 6.0 3.9 24 119
Units A W
VGS dv/dt TJ TSTG
Linear Derating Factor Gate-to-Source Voltage e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
1.0 ± 20
9.9 -55 to + 150
W/°C V
V/ns
°C
Soldering Temperature, for 10 seconds
Diode Characteristics
Parameter IS Continuous Source Current
(Body Diode) ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
300 (1.6mm from case )
Min. Typ. Max. Units Conditions
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