* Fast body diode eliminates the need for external diodes in ZVS applications.
* Lower Gate charge results in simpler drive requirements.
* Higher Gate voltage threshold offers improved noise immunity. S G D-Pak IRFR825TRPbF Absolute Maximum Ratings Parameter ID @ TC = 25°
IRFR825TRPbF Datasheet (215.07 KB)
IRFR825TRPbF
International Rectifier
215.07 KB
Power mosfet.
PD - 96433A IRFR825TRPbF HEXFET® Power MOSFET Applications Zero Voltage Switching SMPS Uninterruptible Power Supplies .
📁 Related Datasheet
IRFR825TR N-Channel MOSFET (INCHANGE)
IRFR812 N-Channel MOSFET (INCHANGE)
IRFR812TRPBF Power MOSFET (International Rectifier)
IRFR8314 N-Channel MOSFET (INCHANGE)
IRFR8314PbF Power MOSFET (International Rectifier)
IRFR010 Transistors (IRF)
IRFR010 Power MOSFET (Vishay)
IRFR012 Transistor (International Rectifier)
IRFR014 Power MOSFET (Vishay)
IRFR014 Power MOSFET (Fairchild Semiconductor)
