IRFS4010PbF Datasheet - International Rectifier

IRFS4010PbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 100V 3.9m: 4.7m: S ID 180A DD S G D2Pak IRFS4010PbF S D.

IRFS4010PbF Features

* s shown in Figures 22a, 22b. 200 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 150 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed

IRFS4010PbF Datasheet (279.43 KB)