Description
l
IRFR/U6215
HEXFET® Power MOSFET
D
VDSS = -150V RDS(on) = 0.295Ω
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surfa
Features
- Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD.
- VGS = 5V for Logic Level Devices Fig 14. For N-Channel.