IRLML6302PBF
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
G1 S2
IRLML6302Pb F
HEXFET® Power MOSFET VDSS = -20V
3D
RDS(on) = 0.60Ω
Micro3TM
Base Part Number IRLML6302TRPb F
Package Type Micro3™ (SOT-23)
Standard Pack
Form
Quantity
Tape...
