IRLU014N

HEXFET Power MOSFET

International Rectifier

IRLU014N Features

* 42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDE

IRLU014N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLU014N Datasheet (135.38 KB)

IRLU014N Datasheet Preview — Preview of IRLU014N PDF

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IRLU014N

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International Rectifier

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135.38 KB

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Hexfet power mosfet.
www.DataSheet.in PD- 94350 IRLR/U014N HEXFET® Power MOSFET Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process.

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IRLU014N HEXFET Power MOSFET International Rectifier

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IRLU014N Features

IRLU014N General Description

Datasheet Details

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