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IRLU3410PBF Datasheet - International Rectifier

Power MOSFET

IRLU3410PBF Features

* nt di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ IRLR/U3410PbF D-Pak (TO-252AA)

IRLU3410PBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLU3410PBF Datasheet (351.96 KB)

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IRLU3410PBF

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International Rectifier

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351.96 KB

Description:

Power mosfet.
PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3410) Straight Lead (IRLU3410) Advanced .

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IRLU3410PBF Power MOSFET International Rectifier

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IRLU3410PBF Features

IRLU3410PBF General Description

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