JANSR2N7666T1 Datasheet - International Rectifier

JANSR2N7666T1 Radiation Hardened Power MOSFET

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for us.

JANSR2N7666T1 Features

* Single event effect (SEE) hardened (up to LET of 90.5 MeV

* cm2/mg)

* Low RDS(on)

* Improved SOA for linear mode operation

* Fast switching

* Low total gate charge

* Simple drive requirements

* Hermetically sealed

* Electrically iso

JANSR2N7666T1-InternationalRectifier.pdf

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Datasheet Details

Part number:

JANSR2N7666T1

Manufacturer:

International Rectifier

File Size:

519.89 KB

Description:

Radiation hardened power mosfet.

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JANSR2N7666T1 JANSR2N7666T1 Radiation Hardened Power MOSFET International Rectifier

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