JANSR2N7666T1 Radiation Hardened Power MOSFET

International Rectifier

Description

IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Techno.
IR HiRel R9 technology provides superior power MOSFETs for space applications.

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Datasheet Specifications

Part number: JANSR2N7666T1
Manufacturer: International Rectifier
File Size: 519.89 KB
Datasheet: JANSR2N7666T1-InternationalRectifier.pdf
Description: Radiation Hardened Power MOSFET

Features

* Single event effect (SEE) hardened (up to LET of 90.5 MeV
* cm2/mg)
* Low RDS(on)
* Improved SOA for linear mode operation
* Fast switching
* Low total gate charge
* Simple drive requirements
* Hermetically sealed
* Electrically iso

Applications

* DC-DC converter
* Motor drives
* Power distribution
* Latching current limiter Product Validation Product Summary
* BVDSS: -200V
* ID : -45A
* RDS(on), max : 34m
* QG, max: 230nC
* REF: MIL-PRF-19500/791 TO-254AA Low Oh

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JANSR2N7666T1 Radiation Hardened Power MOSFET International Rectifier

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