JANSR2N7666T1
Features
- Single event effect (SEE) hardened (up to LET of 90.5 Me V- cm2/mg)
- Low RDS(on)
- Improved SOA for linear mode operation
- Fast switching
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Electrically isolated
- Ceramic eyelets
- Light weight
- ESD rating: Class 3B per MIL-STD-750, Method 1020
Potential Applications
- DC-DC converter
- Motor drives
- Power distribution
- Latching current limiter
Product Validation
Product Summary
- BVDSS: -200V
- ID : -45A-
- RDS(on), max : 34m
- QG, max: 230n C
- REF: MIL-PRF-19500/791
TO-254AA Low Ohmic
Qualified according to MIL-PRF-19500 for space applications
Description
IR Hi Rel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy...
