* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot
RF3808S
International Rectifier
161.58 KB
Power mosfet(vdss=75v/ rds(on)=0.007ohm/ id=106a).
PD - 94338A
AUTOMOTIVE MOSFET
Typical Applications
q q
IRF3808S IRF3808L
HEXFET® Power MOSFET
D
Integrated Starter Alternator 42 Volts Automotive E.
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