RHN7150 Datasheet - International Rectifier

RHN7150 TRANSISTOR N-CHANNEL

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7150 IRHN8150 N-CHANNEL MEGA RAD HARD 100 Volt, 0.055Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier’s RA.

RHN7150 Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

RHN7150 Datasheet (516.46 KB)