RIC7S113E4 Datasheet (International Rectifier) - RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

RIC7S113E4, RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs.

The

RIC7S113E4 Features

* Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for b