SI4435DY

Power MOSFET

International Rectifier

SI4435DY General Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 .

SI4435DY Datasheet (82.65 KB)

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Datasheet Details

Part number:

SI4435DY

Manufacturer:

International Rectifier

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82.65 KB

Description:

Power mosfet.
PD- 93768A Si4435DY HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D.

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SI4435DY Power MOSFET International Rectifier

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SI4435DY General Description

Datasheet Details

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