Datasheet Details
| Part number | U3410 |
|---|---|
| Manufacturer | International Rectifier |
| File Size | 158.62 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 U3410_InternationalRectifier.pdf
|
| Part number | U3410 |
|---|---|
| Manufacturer | International Rectifier |
| File Size | 158.62 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
U3410_InternationalRectifier.pdf
|
l D VDSS = 100V G S RDS(on) = 0.105Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infr
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