HF70D120ACE Datasheet (International) - Haxfred Die in Wafer Form

HF70D120ACE, Haxfred Die in Wafer Form

Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.31V max 1200V min 30µA max Test Conditions IF = 10A, TJ = 25°C TJ = 25°C, IR = 500µA TJ = 25°C, VR = 1200V Mechanical Data Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composit

HF70D120ACE Features

* GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation PD - 93878 Hexfred Die in Wafer Form 1200V IF(nom)=75A VF(typ)= 1.75V @ IF