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HF70D120ACE - Haxfred Die in Wafer Form

Datasheet Summary

Description

Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.31V max 1200V min 30µA max Test Conditions IF = 10A, TJ = 25°C TJ = 25°C, IR = 500µA TJ = 25°C, VR = 1200V Mechanical Data Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composit

Features

  • • • • • • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control.

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Datasheet Details

Part number HF70D120ACE
Manufacturer International
File Size 60.82 KB
Description Haxfred Die in Wafer Form
Datasheet download datasheet HF70D120ACE Datasheet
Additional preview pages of the HF70D120ACE datasheet.

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    HF70D120ACE Features • • • • • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation PD - 93878 Hexfred Die in Wafer Form 1200V IF(nom)=75A VF(typ)= 1.75V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer Benefits Electrical Characteristics (Wafer Form) Parameter VF BVR IRM Description Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.
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