HF70D120ACE Datasheet - International

HF70D120ACE Haxfred Die in Wafer Form

Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.31V max 1200V min 30µA max Test Conditions IF = 10A, TJ = 25°C TJ = 25°C, IR = 500µA TJ = 25°C, VR = 1200V Mechanical Data Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composit.

HF70D120ACE Features

* GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation PD - 93878 Hexfred Die in Wafer Form 1200V IF(nom)=75A VF(typ)= 1.75V @ IF

HF70D120ACE_International.pdf