* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
D7N60C3S Datasheet (176.94 KB)
D7N60C3S
Intersil Corporation
176.94 KB
Hgtd7n60c3s.
HGTD7N60C3S, HGTP7N60C3
Data Sheet January 2000 File Number 4141.3
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated.
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