D7N60C3S Datasheet - Intersil Corporation

D7N60C3S HGTD7N60C3S

D7N60C3S Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

D7N60C3S Datasheet (176.94 KB)